1A 1000V 75nS high voltage rectifier diodes DO-41-2P ultra fast rectifier diodes
Silicon rectifier diodes features:
- Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound
- Void-free Plastic in DO-41 package
- 1.0 ampere operation at TA=55℃ with no thermal runaway
- Exceeds environmental standards of MIL-S-19500/228
- Ultra fast switching for high efficiency
surface mount diode mechanical Data:
- Case: Molded plastic, DO-41
- Terminals: Axial leads, solderable per MIL-STD-202, Method 208
- Polarity: Band denotes cathode
- Mounting Position: Any
- Weight: 0.013 ounce, 0.3 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
| |
UF100 |
UF101 |
UF102 |
UF104 |
UF106 |
UF108 |
UF1010 |
Unit |
|
Peak Reverse Voltage, Pepetitive ; VRM
|
50 |
100 |
200 |
400 |
600 |
800 |
1000 |
V |
|
Maximum RMS Voltage
|
35 |
70 |
140 |
280 |
420 |
560 |
700 |
V |
|
DC Blocking Voltage; VR
|
50 |
100 |
200 |
400 |
600 |
800 |
1000 |
V |
|
Average Forward Current, Io @TA=55℃
3.8”
lead length, 60Hz, resistive or inductive load
|
1.0 |
A |
|
Peak Forward Surge Current IFM (surge)
8.3msec. single half sine-wave
superimposed on rated load (JEDEC
method)
|
30.0 |
A |
|
Maximum Forward Voltage VF @1.0A, 25℃
|
1.00 |
1.10 |
1.70 |
V |
|
Maximum Reverse Current, @ Rated TJ=25 ℃
Reverse Voltage TJ=100 ℃
|
10.0
500
|
£g A
£g A
|
|
Typical Junction capacitance (Note 1) CJ
|
17.0 |
PF
|
|
Typical Junction Resistance (Note 2) R £KJA
|
60.0 |
℃/W |
|
Reverse Recovery Time
IF=.5A, IR=1A, Irr=.25A
|
50 |
75 |
ns |
|
Operating and Storage Temperature Range
|
-55 to +150
|
℃
|
NOTES:
1. Measured at 1 MHz and applied reverse voltage of 4.0 VDC
2. Thermal resistance from junction to ambient and from junction to lead length 0.375”(9.5mm) P.C.B. mounted
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Product Tags:
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DO-41-2P 1A 1000V 75nS High Voltage Rectifier Diodes 30A IFSM Images
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